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M2JZ47

Toshiba Semiconductor

SM2JZ47

SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2GZ47, SM2GZ47A, SM2J...


Toshiba Semiconductor

M2JZ47

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Description
SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A AC POWER CONTROL APPLICATIONS Unit: mm z IT (RMS) = 1A (Ta = 65°C without radiator) z Gate Trigger Current: IGT = 5mA Max. (TYPE “A”) z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT (RMS) = 2A (Tc = 110°C) z Isolation Voltage: VISOL = 1500V (AC, t = 60s) ABSOLUTE MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage SM2GZ47 SM2GZ47A SM2JZ47 SM2JZ47A VDRM 400 600 V R.M.S On−State Tc = 110°C 2 Current IT (RMS) A (Full Sine Waveform) Ta = 65°C 1 Peak One Cycle Surge On−State Current (Non−Repetitive) ITSM 8 (50Hz) A 8.8 (60Hz) I2t Limit Value I2t 0.32 A2s Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) PGM 3 W PG (AV) 0.3 W VFGM 10 V IGM 1.6 A Tj −40~125 °C Tstg −40~125 °C VISOL 1500 V JEDEC ― JEITA ― TOSHIBA 13-10H1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum...




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