CSD1426F

www.datasheet4u.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN HIGH VOLTAGE SILICON POWER TRANSISTORS CSD1426F TO-3P Fully Isolated Plastic Package B C E Colour TV Horizontal Output Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage IC Collector Current -Continuous IE Emitter Current PC Collector Power Dissipation @ Tc=25ºC Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION ICBO VCB=500V, IE=0 Collector Cut off Current VEBO IE=200mA, IC=0 Emitter Base Breakdown Voltage hFE IC=0.5A, VCE=5V DC Current Gain V IC=3A, IB=0.8A Collector Emitter Saturation Voltage CE(Sat) VBE(sat) IC=3A, IB=0.8A Base Emitter Saturation Voltage -VF IF=3.5A Forward Voltage ( Damper Diode) DYNAMIC CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION fT VCE=10V, IC= 100mA Transition Frequency Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz VALUE 1500 600 5.0 3.5 -3.5 34 150 -55 to +150 UNIT V V V A A W ºC ºC MIN 5.0 8 TYP MAX 10 UNIT µA V V V V 8 1.5 2.0 MIN TYP 3 95 MAX UNIT MHz pF SWITCHING CHARACTERISTICS Fall Time tf ICP=3A, IB1(end)= 0.8A 1.0 µs Continental Device India Limited Data Sheet Page 1 of 3 CSD1426F www.datasheet4u.com TO-3P (...