IXFA14N60P

ADVANCE TECHNICAL INFORMATION TM www.DataSheet4U.com PolarHV HiPerFET Power MOSFET IXFA 14N60P IXFP 14N60P IXFH 14N60P VDSS ID25 RDS(on) = 600 V = 14 A ≤ 550 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-247 TO-220 TO-263 (TO-3P,TO-220) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 300 -55 ... +150 150 -55 ... +150 300 250 W °C °C °C °C °C G = Gate S = Source G S (TAB) D = Drain TAB = Drain Maximum Ratings 600 600 ± 30 ± 40 14 42 14 23 0.9 10 V V G V V A A A mJ J V/ns D S (TAB) TO-220 (IXTP) G D S (TAB) TO-263 (IXTA) Features z 1.13/10 Nm/lb.in. 6 4 2 g g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.5 5.5 ±100 5 50 450 550 V V nA µA µA mΩ Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights ...