2SC3969

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3969 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High breakdown voltage ·Fast switching speed APPLICATIONS ·For high voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current -DC Collector current-Peak Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 400 400 7 2 4 2 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector outoput capacitance CONDITIONS IC=1.0A ;IB1=0.1A,L=1mH IC=1mA ;IB=0 IC=50µA ;IE=0 IE=50µA ;IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=400V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=5V IE=-0.1A ; VCE=10V;f=5MHz IE=0; f=1MHz ; VCB=10V 25 MIN 400 400 400 7 SYMBOL VCEO(SUS) V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB 2SC396...