KMA4D5P20X

SEMICONDUCTOR TECHNICAL DATA General Description www.DataSheet4U.com KMA4D5P20X P-CH Trench MOSFET It’s mainly suitable for battery pack or power management in cell phone, and PDA. A F FEATURES VDSS=-20V, ID=-4.5A. Drain-Source ON Resistance. : RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A : RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A Super High Dense Cell Design for Extremely Low RDS(ON) G 1 3 6 4 B1 B C E D1 D D2 DIM A B B1 C D D1 D2 E F G MILLIMETERS _ 0.05 2.926 + _ 0.15 2.80 + _ 0.05 1.626 + _ 0.05 0.15 + 1.25 MAX _ 0.05 1.10 + 0~0.10 _ 0.08 0.45 + _ 0.05 0.95 + _ 0.05 0.40 + MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Source Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range DC ) SYMBOL VDSS VGSS ID * IDP* IS RATING -20 12 4.5 16 -1.3 2.0 1.3 150 -55 150 62.5 /W UNIT V V A A W TSOP-6 Pulsed Marking Type Name Ta=25 Ta=70 PD * Tj Tstg RthJA * MPA Lot No. Thermal Resistance, Junction to Ambient * : Surface Mounted on 1 1 FR4 Board, t 5sec. PIN CONNECTION (TOP VIEW) D DDD D D G 1 6 D D S 2 5 3 4 G S 2006. 8. 22 Revision No : 1 1/5 KMA4D5P20X ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic (Note 3) www.DataSheet4U.com ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL BVDSS IDSS Vth IGSS RDS(ON) gf...