P-Ch Trench MOSFET
SEMICONDUCTOR
TECHNICAL DATA
General Description
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KMA4D5P20X
P-CH Trench MOSFET
It’s mainly suitabl...
Description
SEMICONDUCTOR
TECHNICAL DATA
General Description
www.DataSheet4U.com
KMA4D5P20X
P-CH Trench MOSFET
It’s mainly suitable for battery pack or power management in cell phone, and PDA.
A F
FEATURES
VDSS=-20V, ID=-4.5A. Drain-Source ON Resistance. : RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A : RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A Super High Dense Cell Design for Extremely Low RDS(ON)
G 1 3 6 4 B1 B C E
D1 D D2
DIM A B B1 C D D1 D2 E F G
MILLIMETERS _ 0.05 2.926 + _ 0.15 2.80 + _ 0.05 1.626 + _ 0.05 0.15 + 1.25 MAX _ 0.05 1.10 +
0~0.10 _ 0.08 0.45 + _ 0.05 0.95 + _ 0.05 0.40 +
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Source Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range DC
)
SYMBOL VDSS VGSS ID * IDP* IS RATING -20 12 4.5 16 -1.3 2.0 1.3 150 -55 150 62.5 /W UNIT V V A A W
TSOP-6
Pulsed
Marking
Type Name
Ta=25 Ta=70
PD * Tj Tstg RthJA *
MPA
Lot No.
Thermal Resistance, Junction to Ambient * : Surface Mounted on 1
1 FR4 Board, t 5sec.
PIN CONNECTION (TOP VIEW)
D DDD
D D G
1
6
D D S
2
5
3
4
G
S
2006. 8. 22
Revision No : 1
1/5
KMA4D5P20X
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic
(Note 3)
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)
TEST CONDITION MIN. TYP. MAX. UNIT
SYMBOL
BVDSS IDSS Vth IGSS RDS(ON) gf...
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