KMA2D4P20S

SEMICONDUCTOR TECHNICAL DATA General Description www.DataSheet4U.com KMA2D4P20S P-Ch Trench MOSFET It’s mainly suitable for use as a load switch in battery powered applications. FEATURES VDSS=-20V, ID=-2.4A. Drain-Source ON Resistance. : RDS(ON)=100m (Max.) @ VGS=-4.5V. A 2 E B 3 : RDS(ON)=175m (Max.) @ VGS=-2.5V. 1 DIM MILLIMETERS _ 0.05 A 2.926 + _ 0.05 B 1.626 + 1.25 MAX C _ 0.05 D 0.40 + _ 0.15 E 2.80 + _ 0.10 G 1.90 + _ 0.05 H 0.95 + _ 0.05 J 0.15 + 0.00 ~ 0.10 K _ 0.08 M 0.45 + _ 0.05 N 1.10 + G C N H M MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC ) SYMBOL VDSS VGSS ID * IDP* IS * PD * Tj Tstg RthJA * RATING -20 12 -2.4 -9 -0.9 1.0 0.6 150 -55 150 125 /W UNIT V V A A W K SOT-23 Pulsed (Note1) Source-Drain Diode Current Drain Power Dissipation Ta=25 Ta=100 PIN CONNECTION Top View D 3 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient * : Surface Mounted on 1 1 FR4 Board, t 5sec. 2 J D 1 G S 2006. 4. 6 Revision No : 0 1/5 KMA2D4P20S ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance ON State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage Dynamic (Note 2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Note 1) Pu...