KMA010P20Q

SEMICONDUCTOR TECHNICAL DATA General Description www.DataSheet4U.com KMA010P20Q P-Ch Trench MOSFET It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES VDSS=-20V, ID=-10A. Drain-Source ON Resistance. : RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A. : RDS(ON)=24m (Max.) @ VGS=-2.5V, ID=-7.6A. A D P G H T L 8 5 B1 B2 1 4 DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current ) SYMBOL VDSS VGSS ID * IDP* IS * PD * Tj Tstg RthJA * RATING -20 12 10 48 -2.3 1.6 W 0.625 150 -55 150 80 /W A UNIT V V A FLP-8 Pulsed (Note1) Source-Drain Diode Current Drain Power Dissipation Ta=25 Ta=100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient * : Surface Mounted on 1 1 FR4 Board, t 5sec. 2007. 3. 22 Revision No : 1 1/5 KMA010P20Q ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance ON State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage Dynamic (Note 2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Note 1) Pulse test : Pulse width 300 , Duty Cycle Qg Qgs Qgd td(on) tr td(off) tf 2%...