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2SC3857

SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3857 DESCRIPTION ·...


SavantIC

2SC3857

File Download Download 2SC3857 Datasheet


Description
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3857 DESCRIPTION ·With MT-200 package ·Complement to type 2SA1493 APPLICATIONS ·Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 200 6 15 5 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A VCB=200V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IE=-0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 MIN 200 2SC3857 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 3.0 100 100 180 V µA µA MHz pF 250 Switching times ton ts tf Turn-on time Storage time Fall time IC=5A;RL=12@ IB1=- IB2=0.5A VCC=60V 0.30 2.40 0.40 µs µs µs hFE classifications O 50-100 P 70-140 Y 90-180 2 SavantIC Semiconductor www.DataShe...




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