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S20C40CE

Mospec Semiconductor

Schottky Barrier Rectifiers

www.DataSheet4U.com MOSPEC Schottky Barrier Rectifiers S20C30CE thru S20C60CE SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 3...


Mospec Semiconductor

S20C40CE

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Description
www.DataSheet4U.com MOSPEC Schottky Barrier Rectifiers S20C30CE thru S20C60CE SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150¢J Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O TO-220AB MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Total Device (Rated VR), TC=100¢J Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range Symbol VRRM VRWM VR VR(RMS) IF(AV) S20C 30CE 35CE 40CE 45CE 50CE 60CE 30 35 40 45 50 60 V Unit 21 25 28 10 20 20 32 35 42 V DIM A IFM A IFSM 200 A TJ , Tstg -65 to +150 ¢J A B C D E F G H I J K L M O MILLIMETERS MIN MAX 14.68 15.32 9.78 10.42 5.02 6.52 13.06 14.62 3...




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