C3420

2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High collector power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulse (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 40 20 8 5 8 www.DataSheet.co.kr Unit V V V JEDEC A ― ― 2-8H1A JEITA TOSHIBA 1 1.5 10 150 −55 to 150 A W °C °C Weight: 0.82 g (typ.) Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability tes...