SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC3762
DESCRIPTION ·...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2SC3762
DESCRIPTION ·With TO-3PML package ·High speed switching ·High current capability APPLICATIONS ·For use in high speed and power switching applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS MAX 150 100 6 15 65 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SC3762
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=10A ;IB=1A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=100V ;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=4V; IC=0
10
µA
hFE
DC current gain
IC=5A ; VCE=5V
30
120
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
PACKAGE OUTLINE...