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KBU8J

Galaxy Semi-Conductor

SILICON BRIDGE RECTIFIERS

BL GALAXY ELECTRICAL www.DataSheet4U.com KBU8A - - - KBU8M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 8.0A SILICON BRIDGE R...


Galaxy Semi-Conductor

KBU8J

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BL GALAXY ELECTRICAL www.DataSheet4U.com KBU8A - - - KBU8M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 8.0A SILICON BRIDGE RECTIFIERS FEATURES Rating to 1000V PRV Surge overload rating to 2 5 0 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded KBU .933(23.7) .894(22.7) .185(4.7) .165(4.2) .160(4.1) .140(3.6) 45 0 .280(7.1) .260(6.6) .760(19.3)Max .700(17.8) .660(16.8) .085(2.2) .065(1.7) + + _ ~ .075(1.9)R.TYP. (2 PLACES) plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 1.0(25.4)Min ~ + .455(11.3) .405(10.3) .260(6.6) .180(4.5) .205(5.2) .185(4.7) .052(1.3) .048(1.2) .220(5.6) .180(4.6) Dimensions in inches and (mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. KBU 8A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard output current @TA=50 KBU 8B 100 70 100 KBU 8D 200 140 200 KBU 8G 400 280 400 8.0 KBU 8J 600 420 600 KBU 8K 800 560 800 KBU 8M 1000 700 1000 UNITS V V V A V RRM V RMS V DC IF(AV) 50 35 50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage @ 4.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA=100 IFSM 2 5 0.0 A VF IR TJ TSTG 1.0 10.0 1.0 - 55 ---- + ...




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