SPB73N03S2L-08

www.DataSheet4U.com SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS® Power-Transistor Feature N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 30 8.4 73 P- TO220 -3-1 V mΩ A Enhancement mode Logic Level Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated Type SPP73N03S2L-08 SPB73N03S2L-08 SPI73N03S2L-08 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4037 Q67042-S4036 Q67042-S4081 Marking 2N03L08 2N03L08 2N03L08 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C, 1) Value 73 62 320 170 10 6 ±20 107 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=73A, V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=73A, V DS=24, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-04-24 www.DataSheet4U.com SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA - Values typ. 0.9 max. 1.4 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unles...