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SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08
OptiMOS® Power-Transistor
Feature
• N-Channel
Produc...
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SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08
OptiMOS® Power-
Transistor
Feature
N-Channel
Product Summary VDS R DS(on) ID
P- TO262 -3-1 P- TO263 -3-2
30 8.4 73
P- TO220 -3-1
V mΩ A
Enhancement mode Logic Level Excellent Gate Charge x R DS(on) product (FOM)
Superior thermal resistance
175°C operating temperature Avalanche rated dv/dt rated
Type SPP73N03S2L-08 SPB73N03S2L-08 SPI73N03S2L-08
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67042-S4037 Q67042-S4036 Q67042-S4081
Marking 2N03L08 2N03L08 2N03L08
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1)
TC=25°C,
1)
Value 73 62 320 170 10 6 ±20 107 -55... +175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=73A, V DD=25V, RGS=25Ω
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=73A, V DS=24, di/dt=200A/µs, T jmax=175°C
kV/µs V W °C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-04-24
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SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA -
Values typ. 0.9 max. 1.4 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unles...