BTNA44N3

CYStech Electronics Corp. Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : 2010.07.14 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44N3 BVCEO IC RCESAT(typ.) 400V 300mA 10Ω Features High breakdown voltage. (BVCEO =400V) Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA. Complementary to BTPA94N3 Pb-free package Symbol BTNA44N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in. BTNA44N3 Limit 500 400 6 300 350 (Note) 357 150 -55~+150 Unit V V V mA mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : 2010.07.14 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 hFE 2 *hFE 3 *hFE 4 fT Cob Min. 500 400 6 80 100 50 40 50 - Typ. 0.1 - Max. 100 100 100 0.4 0.5 0.75 0.75 270 7 Unit V V V nA nA nA V V V V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=500V, IE=0 VCE=400V, VBE=0 VEB=4V, IC=0 IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10...