BTNA42N3

CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C209N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTNA42N3 Description High breakdown voltage. (BVCEO=300V) Low collector output capacitance. (Typ. 3pF at VCB =30V) Ideal for chroma circuit. Symbol BTNA42N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits 300 300 6 500 225 (Note) 556 150 -55~+150 Unit V V V mA mW ℃/W °C °C Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in. BTNA42N3 CYStek Product Specification CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C209N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 300 300 6 25 52 40 50 Typ. 0.1 2 Max. 100 100 0.5 2. 0.9 270 3.0 Unit V V V nA nA V V V MHz pF Test Conditions IC=50µA IC=1mA IE=50µA VCB=200V VEB=6V IC=20mA, IB=2mA IC=30mA, IB=1.5mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=20V, IC=10mA, f=100MHz VCB=20V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range K 52~120 P 82~180 Q 120~270 ...