CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTNA06N3
Spec. No. : C216N3 Issued Date : 200...
CYStech Electronics Corp.
General Purpose
NPN Epitaxial Planar
Transistor
BTNA06N3
Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2012.10.25 Page No. : 1/6
Description
The BTNA06N3 is designed for use in general purpose amplification and switching application. High current , IC = 0.5A Low VCE(sat) , VCE(sat) = 0.25V(typ.) at IC/IB = 100mA/10mA Complementary to BTPA56N3. Pb-free lead plating and halogen-free package
Symbol
BTNA06N3
Outline
SOT-23
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature
Storage Temperature
Symbol VCBO VCEO VEBO IC PD Tj
Tstg
BTNA06N3
Limits 150 80 7 500 225 150
-55~+150
Unit V V V mA mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2012.10.25 Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO ICES IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT
Min.
150 80 7 100 100 100
Typ.
-
Max.
100 100 100 0.25 1.2 -
Unit
V V V nA nA nA V V MHz
Test Conditions
IC=100μA IC=1mA IE=100μA VCB=120V VCE=60V VEB=7V IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA, f=100MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device BTNA06N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
BTNA...