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BTNA06N3

Cystech Electonics

General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTNA06N3 Spec. No. : C216N3 Issued Date : 200...


Cystech Electonics

BTNA06N3

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Description
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTNA06N3 Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2012.10.25 Page No. : 1/6 Description The BTNA06N3 is designed for use in general purpose amplification and switching application. High current , IC = 0.5A Low VCE(sat) , VCE(sat) = 0.25V(typ.) at IC/IB = 100mA/10mA Complementary to BTPA56N3. Pb-free lead plating and halogen-free package Symbol BTNA06N3 Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg BTNA06N3 Limits 150 80 7 500 225 150 -55~+150 Unit V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2012.10.25 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Min. 150 80 7 100 100 100 Typ. - Max. 100 100 100 0.25 1.2 - Unit V V V nA nA nA V V MHz Test Conditions IC=100μA IC=1mA IE=100μA VCB=120V VCE=60V VEB=7V IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA, f=100MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTNA06N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel BTNA...




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