BTN5551N3

CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN5551N3 Description The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) Complement to BTP5401N3 Symbol BTN5551N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 225 150 -55~+150 Unit V V V mA mW °C °C BTN5551N3 CYStek Product Specification CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 180 160 6 80 80 30 52 100 Typ. 0.1 Max. 50 50 0.15 0.2. 1 1 390 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=6V, IC=2mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE4 Rank Range K 52~120 P 82~180 Q 120~270 R 180~390 ...