BTN3501E3

CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501E3 Low VCE(sat) High BVCEO Excellent current gain characteristics Features Symbol BTN3501E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 80 6 10 20 (Note 1) 2 50 62.5 2.5 150 -55~+150 Unit V V V A W °C/W °C/W °C °C BTN3501E3 CYStek Product Specification CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. 80 60 40 Typ. 0.3 1.0 50 130 Max. 10 50 0.6 1.5 Unit V µA µA V V MHz pF Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V, IC=0 IC=8A, IB=0.4A IC=8A, IB=0.8A VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Characteristic Curves Grounded Emitter Output Characteristics 2500 Collector Current---IC(mA) 2000 1500 1000 50...