BTN2129T3

CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129T3 Description The BTN2129T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High current capability Low VCE(SAT) High current gain Monolithic construction with built-in base-emitter shunt resistors Equivalent Circuit BTN2129T3 C B R1≈8k R2≈120 Outline TO-126 B：Base C：Collector E：Emitter E BCE BTN2129T3 CYStek Product Specification CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=100ms Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 80 50 5 8 12 *1 1 20 150 -55~+150 Unit V V V A W °C °C Characteristics (Ta=25°C) Symbol BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) 1 *VBE(on) 2 *hFE 1 *hFE 2 *hFE 3 Min. 50 500 2 2 Typ. Max. 10 10 2 1.3 1.5 2.1 2 2.1 20 Unit V µA µA mA V V V V V K K Test Conditions IC=1mA, IB=0 VCE=40V, IE=0 VCB=80V, IE=0 VEB=5V, IC=0 IC=3A, IB=12mA IC=5A, IB=20mA IC=3A, IB=12mA VCE=3V, IC=3A VCE=4V, IC=4A VCE=3V, IC=500mA VCE=3V, IC=3A VCE=4V...