SPP80N06S2L-H5

www.DataSheet4U.com SPP80N06S2L-H5 SPB80N06S2L-H5 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature N-Channel 55 5 80 P- TO220 -3-1 V mΩ A Enhancement mode 175°C operating temperature dv/dt rated Type SPP80N06S2L-H5 SPB80N06S2L-H5 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6054 Q67060-S6055 Marking 2N06LH5 2N06LH5 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Value 80 80 Unit A ID Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot T j , Tstg 320 700 6 ±20 300 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.DataSheet4U.com SPP80N06S2L-H5 SPB80N06S2L-H5 Symbol min. Values typ. 0.34 max. 0.5 62 62 40 K/W Unit Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshol...