SPP80N06S2L-06

www.DataSheet4U.com SPP80N06S2L-06 SPB80N06S2L-06 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature N-Channel 55 6.3 80 P- TO220 -3-1 V mΩ A Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated Type SPP80N06S2L-06 SPB80N06S2L-06 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6033 Q67060-S6034 Marking 2N06L06 2N06L06 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 530 25 6 ±20 250 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.DataSheet4U.com SPP80N06S2L-06 SPB80N06S2L-06 Symbol min. Values typ. 0.4 max. 0.6 62 62 40 K/W Unit Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DS...