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Preliminary data
SPP80N04S2L-03 SPB80N04S2L-03
Feature
OptiMOS =Power-Transistor
Product Summar...
www.DataSheet4U.com
Preliminary data
SPP80N04S2L-03 SPB80N04S2L-03
Feature
OptiMOS =Power-
Transistor
Product Summary VDS RDS(on) ID
P-TO263-3-2
max. SMD version
N-Channel Enhancement mode Logic Level =175°C operating temperature Avalanche rated dv/dt rated
40 3.1 80
P-TO220-3-1
V mΩ A
Type SPP80N04S2L-03 SPB80N04S2L-03
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4261 Q67040-S4262
Marking 2N04L03 2N04L03
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol ID Value Unit
Continuous drain current
TC = 25 °C, 1) TC=100°C
A 80 80
Pulsed drain current
TC=25°C
ID puls EAS EAR
320 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID =80 A , VDD=25V, RGS =25Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS =80A, VDS=32V, di/dt=200A/µs, Tjmax =175°C
dv/dt
VGS Ptot Tj , Tstg
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2001-06-25
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Preliminary data
SPP80N04S2L-03 SPB80N04S2L-03
Values min. typ. max. Unit
Thermal Characteristics Parameter Characteristics Symbol
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 2)
RthJC RthJA RthJA
-
-
0.5 62 62 40
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Symbol min...