SPP80N04S2L-03

www.DataSheet4U.com Preliminary data SPP80N04S2L-03 SPB80N04S2L-03 Feature OptiMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO263-3-2 max. SMD version N-Channel Enhancement mode Logic Level =175°C operating temperature Avalanche rated dv/dt rated 40 3.1 80 P-TO220-3-1 V mΩ A Type SPP80N04S2L-03 SPB80N04S2L-03 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4261 Q67040-S4262 Marking 2N04L03 2N04L03 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C, 1) TC=100°C A 80 80 Pulsed drain current TC=25°C ID puls EAS EAR 320 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID =80 A , VDD=25V, RGS =25Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =80A, VDS=32V, di/dt=200A/µs, Tjmax =175°C dv/dt VGS Ptot Tj , Tstg Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-06-25 www.DataSheet4U.com Preliminary data SPP80N04S2L-03 SPB80N04S2L-03 Values min. typ. max. Unit Thermal Characteristics Parameter Characteristics Symbol Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) RthJC RthJA RthJA - - 0.5 62 62 40 K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Symbol min...