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SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4
OptiMOS® Power-Transistor
Feature
• N-Channel
Product S...
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SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4
OptiMOS® Power-
Transistor
Feature
N-Channel
Product Summary VDS R DS(on) ID
P- TO262 -3-1 P- TO263 -3-2
40 4 80
P- TO220 -3-1
V mΩ A
Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
Type SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67060-S6014 Q67060-S6013 Q67060-S6014
Marking 2N04H4 2N04H4 2N04H4
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80 320 660 25 6 ±20 300 -55... +175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=32V, di/dt=200A/µs, T jmax=175°C
kV/µs V W °C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-08
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SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.35 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristi...