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SPB80N03S2L-03 Dataheets PDF



Part Number SPB80N03S2L-03
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS Power-Transistor
Datasheet SPB80N03S2L-03 DatasheetSPB80N03S2L-03 Datasheet (PDF)

www.DataSheet4U.com SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 2.8 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1.

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www.DataSheet4U.com SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 2.8 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67040-S4248 Q67040-S4259 Q67042-S4078 Marking 2N03L03 2N03L03 2N03L03 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 810 30 6 ±20 300 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.DataSheet4U.com SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID=250µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.01 1 1 1 100 100 nA mΩ 2.9 2.3 2.3 2 3.8 3.5 3.1 2.8 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=80A V GS=4.5V, I D=80A, SMD version Drain-source on-state resistance 4) V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 255A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-05-09 www.DataSheet4U.com SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =24V, ID =80A, VGS =0 to 10V VDD =24V, ID =80A Symbol Conditions min. Values typ. 185 6150 2400 540 2.5 11.8 34 99 90 max. - Unit gfs Ciss Coss Crss RG td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =80A VGS =0V, VDS =25V, f=1MHz 93 - S 8180 pF 3190 810 17.7 51 148 135 Ω ns VDD =15V, VGS =10V, ID =40A, RG =1.1Ω - 19 57 166 2.9 26 86 220 - nC V(plateau) VDD = 24 V , ID =80A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =80A VR =15V, IF =lS , diF /dt=100A/µs IS TC=25°C - 1 65 87 80 320 1.3 80 108 A V ns nC Page 3 2003-05-09 www.DataSheet4U.com SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 90 SPP80N03S2L-03 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V 320 SPP80N03S2L-03 W A 240 70 60 50 P tot 200 160 40 120 30 80 20 40 10 0 0 0 20 40 60 80 100 120 140 160 °C 190 ID 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP80N03S2L-03 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP80N03S2L-03 K/W 10 /I D 0 A =V D S t = 36.0µs p Z thJC 10 -1 ID 10 2 RD S(o n) 100 µs 10 -2 D = 0.50 0.20 1 ms -3 10 0.10 0.05 10 -4 single pulse 0.02 0.01 10 1 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 www.DataSheet4U.com SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS SPP80N03S2L-03 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs SPP80N03S2L-03 190 Ptot = 300W i h gf VGS [V] a b 2.5 2.8 3.0 3.3 3.5 3.8 4.0 4.5 10.0 11 A 160 140 e mΩ d e 9 c d R DS(on) 8 7 6 5 4 f g h i ID 120 100 80 60 c d e f g h i.


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