WT9435M

www.DataSheet4U.com WT9435M DRAIN CURRENT -4.8 AMPERS DRAIN SOUCE VOLTAGE -30 VOLTAGE Surface Mount P-Channel Enhancement Mode MOSFET D 1 S 8 P b Lead(Pb)-Free D 7 2 3 S D 6 S G D 4 5 Features: *Super high dense cell design for low RDS(ON) R DS(ON) <55 mΩ @VGS =-10V R DS(ON) <85 m Ω@VGS =-4.5V *Rugged and Reliable *SO-8 Package 1 SO-8 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -30 Unite V V A A A W C/W C +20 -4.8 -24 -1.7 2.5 50 -55 to 150 Device Marking WT9435M=STM9435 http://www.weitron.com.tw WEITRON 1/6 01-Jul-05 www.DataSheet4U.com WT9435M (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Electrical Characteristics Characteristic Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current +20V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=-24V, VGS=0V Drain-Source On-Resistance VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A On-State Drain Current VDS=-5V, VGS=-10A Forward Transconductance VDS=-5V, ID=-5.3A -30 -1 -1.5 -2.5 +100 -1 55 85 V V nA uA mΩ -20 rDS (on) 45 75 ID(on) gfs 5 - A S - Dynamic (3) Input Capacitanc...