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2SC3307 Dataheets PDF



Part Number 2SC3307
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3307 Datasheet2SC3307 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3307 DESCRIPTION ·With TO-3PL package ·Excellent switching times : tr=1.0µs(Max .),tf=1.0µs(Max .)(IC=5A) ·High collector breakdown voltage : VCEO=800V APPLICATIONS ·High speed,high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symb.

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3307 DESCRIPTION ·With TO-3PL package ·Excellent switching times : tr=1.0µs(Max .),tf=1.0µs(Max .)(IC=5A) ·High collector breakdown voltage : VCEO=800V APPLICATIONS ·High speed,high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 10 15 3 150 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V ;IE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=5A ; VCE=5V 10 10 MIN 800 900 2SC3307 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 1 V V µA mA Switching times tr tstg tf Rise time Storage time Fall time IC=1A ; VCC?400V IB1=-IB2=0.4A 1.0 3.0 1.0 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3307 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3307 4 .


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