AOU452

www.DataSheet4U.com AOU452 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU452 is Pb-free (meets ROHS & Sony 259 specifications). AOU452L is a Green Product ordering option. AOU452 and AOU452L are electrically identical. TO-251 D Features VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 9 mΩ (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 4.5V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 55 40 100 30 135 50 25 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RθJA RθJC Typ 39 2.5 Max 50 3 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOU452 www.DataSheet4U.com Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Bod...