AOU448

www.DataSheet4U.com AOU448 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU448 is Pb-free (meets ROHS & Sony 259 specifications). AOU448L is a Green Product ordering option. AOU448 and AOU448L are electrically identical. TO-251 D Top View Drain Connected to Tab G S Features VDS (V) = 30V ID = 75A RDS(ON) < 5.6mΩ (VGS = 10V) RDS(ON) < 9mΩ (VGS = 4.5V) G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 30 ±20 75 56 200 30 45 50 25 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol Steady-State Steady-State RθJC Typ 44 2 Max 55 3 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOU448 www.DataSheet4U.com Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A VDS=5V, ID=20A ...