AOD1N60

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 700V@150℃ 1.3A < 9Ω TO252 DPAK Top View Bottom View D D Top View TO251A IPAK Bottom View TO251 Top View Bottom View D S G AOD1N60 G S S D G AOI1N60 G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL DS G AOU1N60 Maximum 600 ±30 1.3 0.8 4 1 15 30 5 45 0.36 -50 to 150 300 G S DG S Units V V A A mJ mJ V/ns W W/ oC °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 45 ...