A1658

Inchange Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4369 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -30 -30 -5 -3 -0.3 15 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1658 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 B -30 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A B -0.3 -0.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-2V -0.75 -1.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 70 240 hFE-2 DC current gain IC=-2.5A ; VCE=-2V 25 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 40 pF fT Transition frequency IC=-0.5A ; VCE=-2V 100 MHz ‹ hFE-1 Classifications O 70-140...