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2SA1216

Part Number	2SA1216
Manufacturer	Inchange Semiconductor Company Limited
Description	Silicon PNP Power Transistor
Published	Mar 19, 2009
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage-...
Datasheet	2SA1216 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2922 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -17 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 200 W 150 ℃ Tstg Stora...

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