2SC3159

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3159 DESCRIPTION ·With TO-220F package ·High voltage ·High switching speed APPLICATIONS ·For switching regulator applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 10 20 3.5 80 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SC3159 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Collector-emitter breakdown voltage IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=400V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V 400 V Collector-base breakdown voltage 500 V Emitter-base breakdown voltage 7 V Collector-emitter saturation voltage 1.0 V Base-emitter saturation voltage 1.2 V Collector cut-off current 10 µA Emitter cut-off current 10 µA DC current gain 15 80 DC current gain 10 2 SavantIC Semiconductor www.DataSheet4U.com Product...