SBN13003A

www.DataSheet4U.com SemiWell Semiconductor SBN13003A High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical [email protected]) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical [email protected]/0.25A) - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 3.Base ○ c ○ 1.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-92 1 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ 23 Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 5 ms ) Base Current Base Peak Current ( tP ＜ 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 1.5 3.0 0.75 1.5 1.1 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient Value 113.6 Units °C/W Mar, 2003. Rev. 3 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 www.DataSheet4U.com SBN13003A Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 0.5A IC = 1.0A IC = 1.5A IC = 0.5A IC = 1.0A IC =...