SBN13001

www.DataSheet4U.com SemiWell Semiconductor SBN13001 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 120ns@100mA) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 120mV@100mA/20mA) - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-92 1 23 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 5 ms ) Base Current Base Peak Current ( tP ＜ 5 ms ) Total Dissipation at TA = 25 °C Storage Temperature Max. Operating Junction Temperature Value 700 400 8.0 0.2 0.4 0.1 0.2 750 - 65 ~ 150 150 Units V V V A A A A mW °C °C Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient Value 166 Units °C/W Oct, 2002. Rev. 1 Copyright@S emiWell S emiconduct or Co., Ltd., All rights reserved 1/4 www.DataSheet4U.com SBN13001 Electrical Characteristics Symbol ICEV VCEO(sus) VCE(sat) VBE(sat) hFE ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Curr...