IRFIB6N60APBF

www.DataSheet4U.com SMPS MOSFET PD - 94838 IRFIB6N60APbF Rds(on) max 0.75Ω HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 600V ID 5.5A TO-220 FULLP AK G DS Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 5.5 3.5 37 60 0.48 ± 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Single Transistor Forward Active Clamped Forward www.irf.com Notes  through † are on page 8 1 11/13/03 www.DataSheet4U.com IRFIB6N60APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-t...