2SD2065

Power Transistors 2SD2065 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1372 Unit: mm q q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 140 140 5 12 7 80 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 0.7 s Features 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 140V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 5A VCE = 5V, IC = 5A IC = 5A, IB = 0.5A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 110 20 60 20 1.8 2.0 V V MHz pF 200 min typ max 50 50 Unit µA µA Forward current transfer ratio Base to emitter volt...