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2SD974

Renesas Technology

Silicon NPN Epitaxial Transistor

www.DataSheet4U.com 2SD974 Silicon NPN Epitaxial REJ03G0774-0300 Rev.3.00 Oct 06, 2006 Application • Power switching •...


Renesas Technology

2SD974

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www.DataSheet4U.com 2SD974 Silicon NPN Epitaxial REJ03G0774-0300 Rev.3.00 Oct 06, 2006 Application Power switching TV horizontal deflection output Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Surge collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) IC(surge) PC Tj Tstg Ratings 120 60 5 1 1.5 4 0.9 150 –55 to +150 Unit V V V A A A W °C °C Rev.3.00 Oct 06, 2006 page 1 of 5 2SD974 Electrical Characteristics www.DataSheet4U.com (Ta = 25°C) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) tf Min 120 60 5 — 150 — — — Typ — — — — — — — 0.4 Max — — — 1.0 — 0.3 1.2 — Unit V V V µA V V pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1 A*1 IC = 1 A, IB = 0.05 A*1 ICP = 1 A, IB1 = –IB2 = 50 mA*1 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test Rev.3.00 Oct 06, 2006 page 2 of 5 2SD974 Main Characteristics www.DataSheet4U.com Maximum Collector Dissipation Curve Area of Safe Operaton 6 f = 15....




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