Document
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2975
DESCRIPTION ·With TO-66 package ·High breakdown voltage ·Fast switching speed. APPLICATIONS ·For switching regulator applications ·General purpose power amplifier PINNING (See Fig.2)
PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 800 400 7 5 40 175 -55~175 UNIT V V V A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=5mA ; RBE=: IC=1mA ; IE=0 IE=1mA ; IC=0 IC=2A; IB=0.3A IC=2A; IB=0.3A VCB=640V ;IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V 10 MIN 400 800 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
2SC2975
TYP.
MAX
UNIT V V V
1.0 1.5 30 10 35
V V µA µA
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2975
Fig.2 Outline dimensions
3
.