RMWP23001

RMWP23001 www.DataSheet4U.com June 2004 RMWP23001 21–24 GHz Power Amplifier MMIC General Description The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset. The RMWP23001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications. Features 4mil substrate Small-signal gain 22.5dB (typ.) 1dB compressed Pout 23.5dBm (typ.) Chip size 2.6mm x 1.2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 607 +8 -30 to +85 -55 to +125 36.5 Units V V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMWP23001 Rev. C RMWP23001 Electrical www.DataSheet4U.com Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Currrent Idq = 400mA Min 21 20 Typ -0.3 22.5 1.0 21.5 24 25 400 430 410 15 14 12 33 8 Max 24 Units GHz V dB dB dB dBm dBm mA mA mA % dB dB dBm dB Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin = -8dBm Gain Variation vs. Fr...