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RMWM38001 Dataheets PDF



Part Number RMWM38001
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 38 GHZ Mixer
Datasheet RMWM38001 DatasheetRMWM38001 Datasheet (PDF)

RMWM38001 www.DataSheet4U.com June 2004 RMWM38001 38 GHz Mixer MMIC General Description The RMWM38001 is a 38 GHz Mixer designed for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF Components amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWM38001 is a GaAs MMIC diode mixer utilizing our 0.25µm power PHEMT process. The MMIC can be used as both an Upconve.

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RMWM38001 www.DataSheet4U.com June 2004 RMWM38001 38 GHz Mixer MMIC General Description The RMWM38001 is a 38 GHz Mixer designed for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF Components amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWM38001 is a GaAs MMIC diode mixer utilizing our 0.25µm power PHEMT process. The MMIC can be used as both an Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of mixer applications. Features • 4mil substrate • Conversion loss 5dB (Upconverter) • Conversion loss 8dB (Downconverter) • No DC bias required • Chip size 1.4mm x 1.4mm Device Absolute Ratings Symbol PIN TC Tstg Parameter RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Ratings +25 -30 to +85 -55 to +125 Units dBm °C °C Electrical Characteristics (At 25°C), 50 Ω system, LO = +12 dBm Parameter RF Frequency Range LO Frequency Range IF Frequency Range LO Drive Power Up Conversion Loss Down Conversion Loss1 Conversion Loss Variation vs Freq. Note: 1: Device 100% RF tested as downconverter only. L0 drive = +12dBm, RF Pin = -10dBm, IF = 5GHz. Min 37 Typ 32–35 4.7–5.3 12 5 8 3 Max 40 16 10 Units GHz GHz GHz dBm dB dB dB ©2004 Fairchild Semiconductor Corporation RMWM38001 Rev. D RMWM38001 Application Information www.DataSheet4U.com CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2mil gap between the chip and the substrate material. UP-CONVERSION MMIC CHIP DOWN-CONVERSION MMIC CHIP RF OUT IF IN RF IN IF OUT GROUND (Back of CHIP) GROUND (Back of CHIP) LO IN LO IN Figure 1. Functional Block Diagram 0.0 1.4 0.7205 0.863 1.4 1.4 0.3055 0.163 0.0 0.0 Dimensions in mm 0.3065 0.164 0.0 1.4 Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 1.4mm x 1.4mm x 100µm. Back of chip is RF Ground) ©2004 Fairchild Semiconductor Corporation RMWM38001 Rev. D RMWM38001 www.DataSheet4U.com IF INPUT/OUTPUT 5 MIL THICK ALUMINA 50Ω DIE-ATTACH 80 Au/20 Sn 5 MIL THICK ALUMINA 50Ω 5 MIL THICK ALUMINA 50Ω LO INPUT RF INPUT/OUTPUT L < 0.015" (6 Places) 2 MIL GAP Figure 3. Recommend Assembly Diagram1 Note: 1: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. Recommended Procedure for Operation CAUTION: THIS IS AN ESD SENSITIVE DEVICE The RMWM38001 does not require DC bias. Apply RF input signal at the appropriate frequency band and input driver level. ©2004 Fairchild Semiconductor Corporation RMWM38001 Rev. D RMWM38001 Typical Characteristics www.DataSheet4U.com PMWM38001 38 GHz Mixer On-Wafer Performance UpConverter. LO Drive Power = 12dBm 0 -2 CONVERSION GAIN (dB) -4 -6 -8 -10 37000 37500 38000 38500 39000 39500 40000 RF OUTPUT FREQUENCY (GHz) Figure 4. PMWM38001 38 GHz Typical On-Wafer Performance DownConverter. LO Drive Power = 12dBm 0 -2 CONVERSION GAIN (dB) -4 -6 -8 -10 37000 37500 38000 38500 39000 39500 40000 RF INPUT FREQUENCY (GHz) Figure 5. ©2004 Fairchild Semiconductor Corporation RMWM38001 Rev. D www.DataSheet4U.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. TRADEMARKS ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectroni.


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