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RMWL38001

Fairchild Semiconductor

38 GHZ Lna

RMWL38001 www.DataSheet4U.com June 2004 RMWL38001 37-40 GHz Low Noise Amplifier MMIC General Description The RMWL3800...


Fairchild Semiconductor

RMWL38001

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Description
RMWL38001 www.DataSheet4U.com June 2004 RMWL38001 37-40 GHz Low Noise Amplifier MMIC General Description The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF Components amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWL38001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of low noise amplifier applications. Features 4 mil substrate Noise figure 2.7dB (typ.) Small-signal gain 22dB (typ.) 1 dB compressed Pout 13.5dBm (typ.) Chip size 2.9mm x 1.25mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC Tstg RJC Parameter Positive DC voltage (+4V Typical) Negative DC voltage Simultaneous (Vd – Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 75 +6 -30 to +85 -55 to +125 169 Units V V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMWL38001 Rev. C RMWL38001 Electrical www.DataSheet4U.com Characteristics (At 25°C), 50 Ω system, Vd = +4V, Quiescent Current Idq = 50 mA Min 37 Typ -0.5 2.7 22 1.5 21 13.5 15 50 55 12 13 23 Max 40 4.0 Units GHz V dB dB dB dB dBm dBm mA mA dB dB dBm Parameter Frequency Range Gate Supply Voltage (Vg)1 Noise Figure Gain Small S...




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