RMWB11001

RMWB11001 www.DataSheet4U.com June 2004 RMWB11001 11 GHz Buffer Amplifier MMIC General Description The RMWB11001 is a 2-stage GaAs MMIC amplifier designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWB11001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications. Features 4 mil substrate Small-signal gain 21dB (typ.) Saturated Power Out 19dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 2.0mm x 1.3mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 104 +8 -30 to +85 -55 to +125 180 Units V V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMWB11001 Rev. C RMWB11001 Electrical www.DataSheet4U.com Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Current (Idq) = 36mA Min 10.5 18 17 Typ -0.5 21 0.5 19 55 35 13 18 4 0.5 Max 11.7 Units GHz V dB dB dBm mA % dB dB dB V Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain Small Signal (Pin = -10dBm) Gain Var...