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2SC2660A

SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A DESC...


SavantIC

2SC2660A

File Download Download 2SC2660A Datasheet


Description
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A DESCRIPTION ·With TO-220 package ·Complement to type 2SA1133/1133A ·High VCEO ·Large PC APPLICATIONS ·Power amplifier applications ·TV vertical deflection applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SC2660 VCEO Collector-emitter voltage 2SC2660A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 180 6 2 3 30 150 -55~150 V A A W CONDITIONS Open emitter VALUE 200 150 V UNIT V SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage 2SC2660 IC=5mA ;IB=0 2SC2660A V(BR)CBO V(BR)EBO ICBO IEBO hFE-1 hFE-2 Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=0.5mA ;IE=0 IE=0.5mA ;IC=0 VCB=200V;IE=0 VEB=4V; IC=0 IC=0.15A ; VCE=10V IC=0.4A ; VCE=10V CONDITIONS IC=0.5A ;IB=50m A IC=0.4A ; VCE=10V 2SC2660 2SC2660A SYMBOL VCEsat VBE MIN TYP. MAX 1.0 1.0 UNIT V V V(BR)CEO Collector-emitter breakdown voltage 150 V 180 200 6 50 50 60 50 240 V V µA µA hFE-1 ...




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