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2SC2335F Dataheets PDF



Part Number 2SC2335F
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC2335F Datasheet2SC2335F Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION ·With TO-220F package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,highspeed ,power switching in inductive circuit, particularly suited for 115 and 220V switchmode applications such as switching regulator’s.

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION ·With TO-220F package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,highspeed ,power switching in inductive circuit, particularly suited for 115 and 220V switchmode applications such as switching regulator’s ,inverters,,DC-DC and converter PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 15 3.5 40 150 -50~150 UNIT V V V A A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=3.0A ; IB1=0.6A,L=1mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=400V ;IE=0 VCE=400V ;VBE(off)=-1.5V TC=125 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1.0A ; VCE=5V IC=3.0A ; VCE=5V 20 20 10 MIN 400 SYMBOL V(SUS)CEO VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 2SC2335F TYP. MAX UNIT V 1.0 1.2 10 10 1.0 10 V V µA µA mA µA 80 Switching times ton tstg tf Turn-on time Storage time Fall time VCC=150V;IC=3.0A; IB1=-IB2=600mA; RL=50D 1.0 2.5 1.0 µs µs µs hFE-2 Classifications R 20-40 O 30-60 Y 40-80 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2335F Fig.2 outline dimensions 3 .


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