2SC2239

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2239 DESCRIPTION ·With TO-66 package ·Complement to type 2SA969 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 160 5 1.5 -1.5 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=500A; IB=50mA IC=500mA ; VCE=5V VCB=160V ;IE=0 VEB=5V; IC=0 IC=100mA ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=100mA ; VCE=10V 70 MIN 160 5 2SC2239 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT TYP. MAX UNIT V V 1.5 1.0 1.0 1.0 240 25 100 V V µA µA pF MHz hFE Classifications O 70-140 Y 120-240 2 SavantIC Semico...