isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5099
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1907 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
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