SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC1913 2SC1913A
DESC...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2SC1913 2SC1913A
DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2SC1913 VCBO Collector-base voltage 2SC1913A 2SC1913 VCEO Collector-emitter voltage 2SC1913A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 180 5 1 1.5 15 150 -55~150 V A A W Open emitter 180 150 V CONDITIONS VALUE 150 V UNIT
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SC1913 IC=0.1mA ,IB=0 2SC1913A IE=10µA ,IC=0 CONDITIONS
2SC1913 2SC1913A
SYMBOL
MIN 150
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 180 5 1.0 V
V(BR)EBO
Emitter-base breakdown voltage 2SC1913
VCEsat
Collector-emitter saturation voltage
IC=0.3A; IB=30mA 2SC1913A IC=0.3A; IB=30mA VCB=120V; IE=0 VEB=4V; IC=0 IC=150mA ; VCE=10V IC=500mA ; VCE=5V IE=0 ; VCB=100V;f=1MHz IC=50mA ; VCE=10V 120 65 50 15 1.5 1.5 1 1 330
V
VBEsat ICBO IEBO hFE-1 hFE-2 COB fT
Base-emitter saturation voltage Collector...