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TM
PROCESS
CPQ110
Triac
Semiconductor Corp.
8.0 Amp, 600 Volt Triac Chip
PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 110 MILS x 110 MILS 8.6 MILS ± 0.6 MILS 80 MILS x 35 MILS 37 MILS x 37 MILS Al - 45,000Å Al/Mo/N...
