FTD2003

www.DataSheet4U.com FTD2003 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features Low ON-state resistance. 2.5V drive. Mount height of 1.1mm. Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Marking : D2003 Switching Time Test Circuit VIN 4V 0V VIN PW=10µS D.C.≤1% D VDD=10V D2 ID=2.2A RL=4.5Ω VOUT 6.4 4.5 S2 S2 G2 0.65 8 7 6 5 3.0 0.95 0.425 unit VDSS VGSS ID IDP PD PT Tch Tstg 20 ±10 2.2 (8.8) 0.8 1.0 150 --55 to +150 min V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA VDS=20V VGS=±8V VDS=10V VDS=10V ID=2.2A ID=0.5A VDS=10V VDS=10V VDS=10V , , , , , , , , , , VGS=0 VGS=0 VDS=0 ID=1mA ID=2.2A VGS=4V VGS=2.5V f=1MHz f=1MHz f=1MHz 20 10 ±10 1.3 5.5 100 130 170 90 43 10 38 30 26 9.5 1 1.5 1.0 130 180 V V A A W W °C °C typ max unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC...