2ST2121

www.DataSheet4U.com 2ST2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ 1 2 TO-3 Audio power amplifier Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2ST2121 Package TO-3 Packaging tray Order code 2ST2121 July 2008 Rev 4 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Absolute maximun rating www.DataSheet4U.com 2ST2121 1 Absolute maximun rating Absolute maximum rating Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value -250 -250 -6 -17 -34 250 -65 to 200 200 Unit V V V A A W °C °C Table 2. Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case ______________ __max Value 0.7 Unit °C/W 2/8 2ST2121 www.DataSheet4U.com Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C;...